Malvern, Pa. Targeting emerging automotive, consumer and industrial applications, Vishay Intertechnology's next-generation family of high-speed infrared emitters combines high-speed performance with significant improvements in radiant intensity.
Built on double hetero chip GaAlAs/GaAlAs technology, the new IR emitters offer improvements of up to 43% in radiant intensity compared with previous generation devices, which extends the range and reliability of infrared data transmission and light barrier systems in the automotive, consumer, and industrial environments. The four new devices feature an 870-nm peak wavelength and an energy-saving typical forward voltage of 1.5 V.
For free air data transmission systems with high modulation frequencies or high data transmission rate requirements such as infrared video data transmission between camcorders and TV sets, Vishay Semiconductors offers two new emitters in the 5-mm round plastic T-1 3/4 package. The TSFF5410 combines a ±22° angle of half intensity with typical radiant intensity of 70 mW/sr, while the TSFF5210 combines a ±10° angle of half intensity with radiant intensity of 180 mW/sr. Both devices feature a high modulation bandwidth of 23 MHz and typical rise and fall times of 15 ns.
For applications such as high-speed IR data transmission and high-performance sensors that require a space-saving surface-mount component, two of the new devices are available in the miniature PLCC-2 SMD package. Both devices offer a 60° angle of half intensity and typical radiant intensity of 10 mW/sr, with typical rise and fall times of 15 ns for the TSMF4710 (with 23-MHz modulation bandwidth) and 30 ns for the TSMF3710 (with 12-MHz modulation bandwidth).
Samples are available now. Production quantities will be available in third quarter 2004 with lead times of 12 weeks for large orders. Pricing per 100 pieces in quantities of 50,000 is $37.50 for the TSFF5410, $38.50 for the TSFF5210, $20.80 for the TSMF4710, and $18.80 for the TSMF3710.
Call (619) 336-0860