IXYS Corp has introduced a high performance family of GaAs based Power PHEMT (Pseudomorphic High Electron Mobility Transistors).
The "PH" series of power PHEMT (AlGaAs/InGaAs) devices, MwT-PH-7, PH-15, and PH-16, are ideally suited for those applications that require medium power, high-gain, good linearity, high PAE (power added efficiency) and high power density. They operate from low frequencies to up to 28 GHz frequency range.
MwT PHEMTs offer state of the art power density and power added efficiency. Typical applications include amplifiers for repeater systems, receiver multicouplers, LNA's, IF amplifiers, mixer, and switch circuits. The PHEMTs are effective for wideband (6 to 18 GHz) or narrow band applications, and are introduced in die form or packaged in RF packages.
The transistors have a P1dB (output power at 1 dB gain compression) that is nearly double that of standard GaAs MESFETs with the same geometry. More new PHEMTs will be introduced with higher power levels. This product performance and product specifications are far superior to earlier generations of PHEMT products.
These devices are available in both chip and package form and are competitively priced. They are deliverable from stock.
IXYS Semiconductor GmbH, 68623 Lampertheim, Germany.