SMART Modular Technologies announced its expanded lineup of 4GB PC3200 registered DIMMs. The new versions are offered in two low-profile heights of 0.72" and 1.2" for sub-1U and standard 1U high-performance computing (HPC) applications. SMART's high-density, high-speed DDR DIMMs are configured as 512Mx72 using cost-effective 512Mb memory components. The new low-profile DIMMs feature four-rank, +2.6-VDC operation at a 400MHz data rate.
"Customer demand for very high-density, high-speed PC3200 registered DIMMs continues to proliferate across multiple types of AMD Opteron blade servers and workstations," observed Al Gulachenski, SMART's Director of Advanced Memory Solutions. SMART's 4GB DIMMs allow OEMs to configure their systems with extensive memory while using less board space. In fact, the 0.72" 4GB DIMMs can help achieve a 38% board-space savings in sub-1U blades by utilizing vertical connectors rather than standard angled connectors. This space savings allows improved system airflow and improved timing margins by having closer DIMM-to-processor spacing.
SMART's low-profile 4GB PC3200 DIMMs are being introduced using 512Mb DDR400 technology to help achieve the mainstream cost and availability benefits typically associated with volume production. Using advanced stacking and packaging methods, the 512Mb components are stacked in two-high and four-high configurations to achieve 4GB of memory in 0.72" and 1.2" high DIMMs. The stacking technologies are robust and ideal for high-speed, HPC
The new DIMMs' four-rank operation uses an extra chip select that essentially allows a single 4GB module to be recognized by the system memory controller as two 2GB modules in one socket. Additionally, single routings are used to simplify the design and provide for even load distribution and timing margins.
SMART's new 4GB four-rank VLP PC3200 registered DIMMs are targeted at two-way and four-way AMD Opteron processor-based blade servers and workstations. For networking applications, processors are specifically designed to take advantage of emerging four-rank high-speed, high-density DDR modules.