Phoenix, Ariz. - Eight new n- and p-channel, low-voltage MOSFETs from ON Semiconductor for portable applications, in 1.6-by-1.6 mm low profile packages, cut on-resistance (RDS) by 60 percent versus comparably packaged MOSFETs, thus improving overall power circuit efficiency by 30 percent. The small 20-volt trench devices, for use in 430- mA to 950-mA applications such as load switches, DC/DC converters and the battery management of cell phones, digital cameras, and portable GPS systems, integrate zener diodes to ensure superior ESD protection.
The company's NTA4151PT1, NTE4151PT1, NTZS3151PT1, and NTZD3152PT1 are p-channel MOSFETs for high-side load switching of up to 850 mA. Their NTA4153NT1, NTE4153NT1 and NTZD3154NT1 are n-channel MOSFETs for low-side load switches up to 915 mA. Both single and dual modes are offered for all devices. In addition, the NTZD3155CT1 is a complementary n-channel and p-channel combination for integrated load switching or low current DC/DC conversion. Typical RDS for these devices ranges from 150 to 900 milliohms, according to the company.
The devices are offered in three package styles. The six-lead, 0.6-mm profile SOT-563 and the three-lead, 0.8-mm profile SC-89 are flat-lead packages. The three-lead, 1-mm profile SC-75 is a gull-wing device. The flat-lead package provides additional thermal performance and profile improvement over the industry standard gull wing package.
The devices are priced between 10 and 12 cents each in 10k quantities.