Greensboro, NCRF Micro Devices, Inc. announced two new gallium arsenide heterojunction bipolar transistor (GaAs HBT) pre-driver power amplifiers (PAs) for cellular base station applications. The half-watt RF3807 and two-watt RF3809 single-stage devices operate across CDMA, GSM, DCS, PCS and UMTS frequencies and are designed to lower the total cost of implementation for manufacturers of cellular base stations. The RF3807 and RF3809 feature high linearity (better than +42 dBm, UMTS), high power-added efficiency (better than 40%, P1dB) and broadband (450-2200 MHz) performance, providing functionality for a variety of wireless applications.
When operating in the UMTS frequency band, the RF3807 driver amplifier provides +28.5 dBm output power at 1-dB compression (OP1dB), 40% power efficiency at OP1dB, a +42 dBm output third-order intercept point [OIP3]), and 14.5-dB gain under linear operation. The RF3807 obtains -60 dBc adjacent channel power ratio (ACPR) at +17 dBm output power (test condition: ACPR measured at 5 MHz offset, WCDMA modulation, 64 channel base station forward link).
When operating in the UMTS frequency band, the RF3809 driver amplifier provides +33.5 dBm OP1dB, 43% power efficiency at OP1dB, +43 dBm OIP3 and 10.5-dB gain under linear operation. The RF3809 obtains -60 dBc ACPR at +20 dBm output power (test condition: ACPR measured at 5 MHz offset, WCDMA modulation, 64 channel base station forward link).
The plastic-packaged RF3807 and RF3809 GaAs HBT pre-driver power amplifiers are designed to deliver a low-cost multiband (450-2200 MHz) option for applications with power output requirements that are less than two-watts (P1dB). For applications requiring driver amplifiers with power output requirements that are greater than two-watts (P1dB), the company offers the RF3800 series.
The RF3807 and RF3809 are priced at $4.07 in quantities of 10,000 units. Currently being sampled, volume production to begin Q2 2005. Click here for the 3807 data sheet
. Click here for the 3809 data sheet
RF MicroDevices, Inc.