Houston, TXMimix Broadband, Inc. announced the introduction of a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) three-stage balanced power amplifier (PA) and complementary three-stage driver amplifier. Both use 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology. Used as a driver and final stage cascade, this chip set achieves 26 dB gain and 1-W output power.
The PA covers the 43.5 to 46.5 GHz frequency bands, and it features small signal gain of 13 dB with +29 dBm output power at 1-dB compression (P1dB). The driver amplifier covers this same frequency band, and achieves small signal gain of 13 dB with +24 dBm P1dB compression point.
The balanced PA and driver amplifier, identified as 44MPA0478 and 44MPA0470 respectively, are well suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), and SATCOM applications.
The company performs 100% on-wafer RF, DC, and output power testing on the 44MPA0478 and 44MPA0470, as well as 100% visual inspection to MIL-STD-883 method 2010. The chips also have surface passivation to protect and provide rugged parts with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.
Engineering samples are available today from stock, along with production quantities. Click here for the 44MPA0470 data sheet. Click here for the 44MPA0478 data sheet.
+1 281-988-4600, www.mimixbroadband.com