Santa Clara, CACalifornia Eastern Laboratories has added a new high-performance, heterojunction bipolar transistor (HBT) to its family of NEC SiGe transistors. The NESG2046 is optimized for noise figure and gain performance, making it well suited for use in voltage-controlled oscillator (VCO) buffer and low-noise amplifier (LNA) applications.
Designed for operation from 500 MHz to 6.0 GHz, the device is available in two lead-free packages: NEC's 19 package and the ultra-miniature M33 package. The flat-lead M33 measures 0.64 x 0.84 mm and is 0.4 mm high.
Housed in the 19 package, the NESG204619 features 0.8-dB typical noise figure at 2 GHz with 11 dB typical associated gain. Housed in the M33 package, the NESG2046M33 features 0.8-dB typical noise figure with 11.5-dB typical associated gain. DC power consumption for both devices is specified at 3 mA at +1 VDC.
The devices are fabricated using a silicon germanium UHS2-HV (High Voltage) wafer process. It is also available in a twin transistor package in combination with a variety of other NEC chips.
The NESG2046 is available now. Click here for the NESG204619 data sheet. Click here for the NESG2046M33 data sheet.
California Eastern Labs,
+1 408-919-2247, www.cel.com