Bernin, FranceThe Soitec Group (Euronext, Paris announced it has generated the world's first single-crystal, thin-film gallium nitride (GaN)-on-insulator substrate which can be used to improve current and future device performance in RF and discrete power applications.
The development was achieved through collaboration with Picogiga International, a Soitec Group division focused on the development and manufacture of compound semiconductor material solutions, and took place at the Smart Cut Enabling Application Laboratory (SCEALAB). A joint technology development program between the Soitec Group and French research consortium, CEA-Leti, SCEALAB was established to develop new, experimental composite substrates. The company's proprietary Smart Cut technology was used by the research team to split and transfer a thin layer of GaN from a GaN donor wafer onto a carrier wafer, generating a single crystal GaN-on-insulator substrate.
According to Carlos Mazure, the Soitec Group's chief technical officer, "This research was performed in very close collaboration with our III-Vs material division, Picogiga International, whose plans to industrialize the new technology are a key component of Soitec's strategy..."
Currently, the GaN development process is based on growing epitaxial layers of GaN on bulk substrates, such as silicon, silicon carbide, and sapphire. RF power devices and high-volume market blue and white LEDs will experience technical limitations in terms of power or brightness that require new technology solutions.
The Soitec Group, +33 (0)4 76 92 75 00 or (978)531-2222, www.soitec.com .