Santa Clara, Calif—Siliconix says the ten new devices in its portfolio of n-channel MOSFETs are the industry's first with high threshold voltage yet low on-resistance (nominally 3.4 volts, and as low as 2.7 milliohms, respectively). Intended for use in high-temperature, high-current applications with inductive loads, these 40- and 60-volt versions are designed to maintain stable operating characteristics in automotive and industrial environments. They include the Si7444DP, -7452DP, -7962DP, and -7964DP; the SUD50N04-06H and -09H; the SUD50N06-08H; the SUM110N04-2m7H and -05H; and the SUM110N06-3m9H.
The new devices are designed to minimize the variation in threshold despite large increases in operating temperature, which when high enough will shift the traditional MOSFET's threshold voltage to near zero and initiate a spontaneous turn-on. Past solutions introduced a negative bias to the circuit, at the expense of additional components, complexity, and overall cost. At the other end, traditional devices with high threshold voltages generally tend to have a correspondingly high on-resistance.
Device datasheets are available at www.vishay.com/doc?72920 (and -72972, -72914, -73101, -72860, -72669, -73160, -72927, -73131, and -73236, corresponding to the aforementioned devices).
Available in the DPAK, D2PAK, and PowerPAK SO-8 packages, these devices are available in production quantities with lead times of 10 to 12 weeks for larger orders. Pricing starts at $1.35 each for U.S. delivery in
Siliconix Incorporated, 1-619-336-0860, www.vishay.com