Tokyo Samples of 512-Mbit DDR2 SDRAMs manufactured using advanced 90-nm process technology will be available in June.
Elpida Memory Inc. in mid-April began producing the devices at its 90-nm, E300 facility in Hiroshima facility. The advanced process will yield 512-Mbit DDR2 SDRAM devices with a small chip size of 69.9-mm2, allowing more devices per wafer for increased unit output. The company had been manufacturing 512-Mbit devices using a 100-nm process.
"Our ability to begin DDR2 SDRAM production at 90-nm will help Elpida meet growing industry demand for high-density, high-speed DRAM such as DDR2-533 and DDR2-667," said Yukio Sakamoto, president and chief executive of Elpida Memory, (Tokyo).
Pricing is not available. Sample products are scheduled to become available in June and volume production based on market demand is anticipated in the second quarter of the fiscal year ending March 31, 2006.
Elpida Memory Inc., 1-408-970-6600, www.elpida.com