Fairchild Semiconductor's 3G Power Amplifier Module Offers the First Dual-Band Capability in the Industry's Smallest Package
South Portland, MEFairchild Semiconductor's PowerEdge dual-band WCDMA/UMTS RF Power Amplifier Module (PAM) increases power-added efficiency (PAE) to 42%, a significant improvement over competitive offerings. As the first 3G PAM to offer both 1850-1910 MHz and 1920-1980 MHz operation in a 3x3 mm LCC package, the device is approximately 44% smaller than alternative 4x4 mm packages.
The PAM addresses the high efficiency, frequency flexibility and size requirements of today's 3G mobile handsets, PDAs, and wireless PC data cards. It is also compliant with the emerging High-Speed Downlink Packet Access (HSDPA) standard.
"Fairchild's PowerEdge dual-band PAMs enable OEMs to design products, allowing customers to access greater frequency band options and significantly extend the range of coverage," says Russ Wagner, general manager of Fairchild's RF power products group. "With increasingly converging functions in cell phones, and the need for power efficiency, the RMPA2265 offers advantages in reducing board space, extending talk time and dual-band frequency flexibility in the industry's smallest package."
The product's excellent linearity and high power-added efficiency are achieved through Fairchild's proprietary InGaP Heterojunction Bipolar Transistor (HBT) technology. The device has selectable high/low power modes used to further optimize current consumption. The two-stage power amplifier internally matches both the input and output to 50 Ohms to minimize the use of external components, thus simplifying design requirements.
The lead (Pb)-free RMPA2265 meets or exceeds the requirements of the joint IPC/JEDEC standard J-STD-020B and is compliant with European Union requirements now in effect.