Geneva STMicroelectronics has started to produce 128-Mbit NAND flash memory using 90-nm process technology.
The company also plans to switch production of its 256-Mbit and 512-Mbit flash memory devices in both 3-V and 1.8-V versions from 120-nm to 90-nm process technology "in the coming months."
The shrink to 90-nm reduces the cost and power consumption of the 128-Mbit NAND flash device, which is widely used in cost-sensitive consumer equipment such as digital still cameras, audio recorders, PDAs, set-top boxes, printers and bundled flash cards.
Its 128-Mbit NAND flash memory, part number NAND128W3A2BN6E, is a 3-V product in a TSOP package.
Its address lines and data I/O signals are multiplexed onto an 8-bit bus, reducing pin count. It also allows the use of a modular NAND interface, enabling manufacturers to produce variations of systems that use higher or lower density devices without changing the footprint.
A software tool chain allows for fast product development. It includes error correction code (ECC) software; bad block management (BBM) to recognize and replace a block that fails an erase or program operation by copying its data to a valid block; wear leveling algorithms that distribute erase and program operations among all the blocks; file system OS native reference software; and hardware simulation models.
The memory is organized into 1024 nominal 16-Kbyte blocks, each of which is divided into pages of 512 bytes plus 16 spare bytes per page that can be read and programmed by page.
The NAND128W3A2BN6E is available in volume; prices range between $4 and $4.50.
The datasheet can be found at www.st.com/stonline/products/literature/ds/10058/nand128w3a.htm.
STMicroelectronics Inc., 1-781-861-2650, www.st.com.