Malvern, Penna.—Two new MOSFET-driver chips from Vishay Intertechnology, the SiC714CD10 and SiC711CD10, simplify the design of single and multiphase PWM-style DC/DC converters and, as expected of devices in an integrated package, contribute to a significant increase in efficiency (in this case, 3 percent) over discrete solutions.
The chips integrate the control MOSFET, the synchronous MOSFET, and driver circuit in a low-profile, low-inductance PowerPAK MLF 10-by-10 mm package.
The SiC714CD10, working from a 3.3- to 16-volt input, delivers up to 27 amps continuous in still air and is optimized for a 10 percent duty ratio. Typical on-resistance values are 3 milliohms for the low-side and 10.2 milliohms for the high-side MOSFET. The second chip, the SiC711CD10, delivers up to 25 amps (rated for a 40 percent duty ratio). Typical on-resistance values are 4 milliohms for both the high- and low-side MOSFETs. Both devices are optimized for 12-V to logic level conversion and are rated for a switching frequency range of 100 kHz to greater than 1 MHz. The
PowerPAK's low thermal impedance and its simple pad geometries enable straightforward board layout and assembly.
Break-before-make operation provides "shoot-thru" immunity and minimizes dead time. These devices also feature under-voltage lockout and a turn-on/turn-off capability. An internal bootstrap diode further reduces
the number of external components required.
Click here for the SiC711CD10 datasheet and here for the SiC714CD10. Samples and production quantities of the MOSFETs with integrated driver are available now, with lead times of 12 weeks for larger orders. Pricing for U.S. delivery in 100k-piece quantities is $2.
Vishay Intertechnology, 1-619-336-0860, www.vishay.com