January 26, 2006Mimix Broadband, Inc. expanded its product line of gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) low noise amplifiers (LNAs). Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the devices cover the 5 to 45 GHz frequency bands and achieve the following performance:
XL1005: 5-20 GHz, 13dB gain +/-2dB gain flatness, 2.2dB noise figure.
XL1004: 35-45 GHz, 18dB gain +/-2dB gain flatness, 2.0 dB noise figure
XL1003: 24-40GHz, 15dB gain +/-3.5dB gain flatness, 1.7 dB noise figure
These LNAs are well suited for millimeter-wave point-to-point radio, LMDS and satellite communication (Satcom) applications.
Mimix performs 100-percent on-wafer RF, DC and noise figure testing on these amplifiers, as well as 100- percent visual inspection to MIL-STD-883 method 2010. These chips also have surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.
Engineering samples are available today from stock, along with small production quantities. Click here for the XL1003 data sheet.
Click here for the XL1004 data sheet.
Click here for the XL1005 data sheet.
Mimix Broadband, Inc., +1 281.988.4600, www.mimixbroadband.com .