Houston, TexasMimix Broadband, Inc. announced the XP1003 GaAs monolithic microwave integrated circuit (MMIC) power amplifier optimized for linear operation. This two-stage power amplifier is well suited for modulation levels up to 64 QAM and has a typical third-order intercept point of +34 dBm. The device also includes Lange couplers to achieve good input/output return loss and has a small signal gain of 16 dB across the band. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this chip covers the 27 to 35 GHz frequency band.
The XP1003 power amplifier is well suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM and VSAT applications.
Mimix performs 100% on-wafer RF, DC and output power testing on the XP1003, as well as 100% visual inspection to MIL-STD-883 method 2010.
The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.
Engineering samples are available from stock and production quantities are available within 6-8 weeks after order processing. Click here for the data sheet.
Mimix Broadband, Inc.,
+1 281.988.4600, www.mimixbroadband.com