Bordeaux, France XMOD Technologies has announced the release of version 2.6 of the HiCUM Master Toolkit, which is designed to address the needs of the SiGe BiCMOS market.
The toolkit features geometry-scalable physics- and processed-based RF models for bipolar transistors. "Highly accurate fully scalable HiCUM models, including modelling of process variations enabling statistical design and circuit yield optimization, can now be generated with unprecedented fast turnaround," reports Michael Schroter, co-founder of XMOD Technologies.
Based on the TRADICA program, the HiCUM Master Toolkit is integrated as an Agilent ICCAP module, allowing native performance and linking of both platforms.
The scalable parameter extraction approach of the toolkit is designed to allow extracting model parameters for heterojunction bipolar transistors (HBT) in a similar way used for MOS devices. Based on a reduced set of measurements, the user can produce a complete library of model parameters ready to be incorporated in a Process Design Kit (PDK). Click here for more information.
XMOD Technologies, +33 5 4000 34 39, www.xmodtech.com .