SAN JOSE, CA Avago Technologies introduced an E-pHEMT (enhancement-mode pseudomorphic high-electron-mobility transistor) power amplifier (PA) designed for IEEE 802.11b/g mobile wireless local area networks (WLANs). The MGA-412P8 is optimized for high linear output power and low operating current. It features a shutdown function to conserve battery power, and it is supplied in a 2 mm x 2 mm LPCC (leadless plastic chip carrier) package.
The MGA-412P8 power amplifier is well suited for portable WLAN applications such as PDAs and mobile handsets, digital cameras, printers and print servers. It is also suitable for use as a power amplifier for RFID transmitters, Bluetooth, and other applications in the license-free 2.4 GHz ISM (industrial, scientific and medical) band.
At 2.452 GHz and +3.3-VDC bias, the MGA-412P8 provides 25.5 dB gain as well as +19 dBm linear power output with IEEE 802.11g OFDM (orthogonal frequency division multiplexing) modulation at a 54 Mbits/s data rate, and three percent EVM (error vector magnitude) while consuming 95 mA current. For 802.11b CCK (complementary code keying) at 11 Mbits/s the MGA-412P8 provides +23 dBm linear Pout at 200 mA current. Typical reverse isolation is greater than 40 dB, and typical quiescent current is 40 mA.
Other features include integrated power detector and power-down functions, and operation from a single +3.3 VDC supply. During shutdown, the power amplifier typically draws 5 microamps. The MGA-412P8 is supplied in a 2.0 mm x 2.0 mm x 0.75 mm, 8-pad JEDEC DRP-N LPCC leadless plastic chip carrier. The package’s lead-free backside metallization provides excellent thermal dissipation as well as visual evidence of solder reflow.
The MGA-412P8 is priced at less than $0.73 each in moderate volumes, and is available now through Avago’s direct sales channel and worldwide distribution partners. Click here for the data sheet.
+1 800 235 0312, www.avagotech.com/rf