South Portland, Maine—Fairchild Semiconductor's 600-volt SuperFET MOSFETs, in a DPAK (TO-252) to address today's ultra-slim, low-profile ballast applications, have as little as one-third the on-resistance (0.6 ~ 1.2 ohms) of traditional planar MOSFETs. They can withstand both the high-speed voltage (dv/dt) and current (di/dt) switching transients of ballasts to operate reliably at very high frequencies.
Typically, as the breakdown voltage of a standard MOSFET rises, its RDS(on) also goes up exponentially and leads to increased die size. Fairchild's SuperFET technology changes this RDS(on)-to-die size relationship from an exponential to a linear one. This approach allows SuperFET devices to achieve a low RDS(on) and small die size, even for a 600-volt breakdown voltage.
"We've added DPAK devices to our SuperFET product portfolio specifically to meet the energy efficiency and the space-reduction demands of lighting manufacturers," said Taehoon Kim, vice president of the Functional Power Group. "Our proprietary SuperFET technology results in the extremely low on-resistance needed to decrease MOSFET die-size and make 600-volt/0.6-ohm DPAK-packaged product possible. In comparison, typical 600-volt/0.6-ohm planar MOSFET devices for lighting applications come in (larger) TO-220- or D2PAK (TO-263) packages."
Click here for additional information about the SuperFET portfolio. Click here for products that target lighting applications.
Click here, here, and here for device datasheets. SuperFET MOSFETs are available in a lead (Pb)-free DPAK package that meets or exceeds the requirements of the joint IPC/JEDEC standard J-STD-020C and is compliant with European Union regulations now in effect. The new MOSFETS are priced at $1.54 each (FCD7N60, RDS= 0.6 ohm maximum), $1.26 (FCD5N60, RDS = 0.95 ohm maximum), and $1.14 (FCD4N60. RDS = 1.2 ohms maximum. Delivery is 12 weeks ARO.
Fairchild Semiconductor, 1-800-341-0392, www.fairchildsemi.com