IRVINE, Calif., Sept. 12, 2006 (PRIMEZONE) --
Microsemi, a manufacturer of high performance analog/mixed signal integrated circuits and high reliability semiconductors, has launched the first 15 devices in their newest generation of POWER MOS 8 products. MOS8 is a new generation of MOSFETs from newly acquired Advanced Power Technologies (bought by Microsemi in April '06. and now called the Power Products Group of Microsemi). This is the fourth gen of power MOSFET, which started with MOS4 about 1984.
These devices are not for low-power apps like cell phones because they're not 25V MOSFETs. These MOSFET and Fast-Reverse Epitaxial Diode FET (FREDFET) devices are for high-power apps from 500V to 1200 V for applications such as welding, plasma cutting, battery chargers, medical, induction heating, Telecom, servers, and even solar power. The company is even looking to support the newly burgeoning solar power market. The solar power market started seeing the light about two years ago when the large 10kW inverters for solar electricity generation took off, especially in countries such as Germany.
Key Performance Features
- Improved oscillation immunity and reduced EMI
- Low RDS(on)
- Low gate charge
- Low switching losses
- Avalanche energy rated
- Lower thermal resistance
- FREDFETs available with fast recovery body diodes
Microsemi engineers employed advanced design techniques to optimize capacitances and gate resistance. The result is a family of devices with improved oscillation immunity, lower peak slew rates, reduced EMI and high dv/dt ruggedness capability. These features combine to simplify filtering and paralleling of multiple devices in high power applications.
In addition, advanced manufacturing processes for the new MOS 8 products have lowered their thermal resistance and enabled higher current ratings for each die size and package type compared to earlier devices. Low capacitance and gate charge specifications enable high switching frequency capability and low switching losses.
MOS8 employs thin wafer technology and improved assembly techniques to lower thermal resistance of products. So the devices can handle higher currents in the same size as previous generations. The enabler was a trade off between the dimensions of the features of the chip and how thick the gate oxides are, the width of the gate, the gate metallization pattern and the material used. The MOS7 used metal gates and the MOS8 uses a poly-silicon gate and the company changed the thicknesses of the features on the chip to control the capacitances.
All MOS 8 devices are 100 percent tested for avalanche energy capability and are offered only in RoHS compliant packages.
"Our new POWER MOS 8 family utilizes advanced technologies and manufacturing processes to deliver what our customers have asked for in our new generation of MOSFETs and FREDFETs," said Russell Crecraft, Vice President and General Manager of Microsemi's Power Products Group in Bend, Oregon. "Our MOS 8 family will offer the industry's broadest range of high voltage, high power, high performance MOSFETs, FREDFETs and PT IGBTs," he said.
MOS 8 FREDFETs have all of the features and advantages of MOS 8 MOSFETs, with the added benefit of a faster body diode recovery speed of <250ns. these="" devices="" provide="" superior="" ruggedness="" and="" reliability="" in="" applications="" where="" the="" body="" diode="" carries="" forward="" current,="" such="" as="" popular="" zero="" voltage="" switching="" (zvs)="" bridge="" topologies.="">250ns.>
First to be released in the POWER MOS 8 family are ten MOSFET and five FREDFET devices with power ratings from 19 to 75 amps and voltage specifications from 500 to 1200 volts. Additional power/voltage combinations will be introduced throughout the balance of 2006 and into early 2007.
The first Ultrafast Recovery FREDFETs, rated at 500 and 600 volts, will feature a 150ns recovery time and are scheduled for release in the fourth quarter of 2006. MOS 8 IGBTs with 600 & 900V ratings will follow in early 2007.
The first POWER MOS 8 devices:
MOS 8 technology utilizes a simplified manufacturing process that significantly lowers costs compared to previous Microsemi power MOSFET products. The 1K pricing for part number APT56M50B2 is $7.34. Contact factory direct for additional pricing. All the announced POWER MOS 8 devices are available for immediate sampling. Technical information is available on the Microsemi web site, http://www.microsemi.com. Samples can be ordered through this site, or from Microsemi sales representatives and authorized distributors.
Microsemi's products include individual components as well as integrated circuit solutions that enhance customer designs by improving performance, reliability and battery optimization, reducing size or protecting circuits. The principal markets the company serves include implantable medical, defense/aerospace and satellite, notebook computers, monitors and LCD TVs, automotive and mobile connectivity applications.
MOS 8 data sheets
FREDFET data sheets
More information may be obtained by visiting its web site at www.microsemi.com.