Dallas, Tex. Dallas Semiconductor's newest nonvolatile SRAM modules integrate a reflowable battery into surface-mountable devices. The wholly owned subsidiary of Maxim Integrated Products has launched
the DS2070W+100 (2M x 8 bits) and the DS3070W+100 (2M x 8 bits with
an integrated RTC).
The DS2070W/DS3070W modules are fully static memories similar in organization and function to the Company's existing single piece NV SRAM modules. These modules can be used in place of SRAM, EEPROM, or flash components, and they are available in
densities from 32k x 8 bits to 2M x 8 bits. All densities have the same footprint and pinout, giving applications the flexibility to grow in density without major redesign.
Handling these modules in standard assembly processes is uncomplicated and
convenient; they can be picked and placed from their shipping trays using existing pick-and-place machines. These modules are also compatible with standard SMT processes and withstand a peak reflow temperature of +225 degrees Celsius (+0/-5 degrees Celsius) for 30 seconds. After reflow, the modules can be washed in an aqueous-based
cleaning solution with no special precautions.
The importance of the DS2070/DS3070's reflowable battery is best understood when compared to a traditional two-piece, surface-mount competitive solution. A two-piece surface-mount solution requires
additional assembly steps and costs: special care must be taken when
handling the battery, as the primary battery cell currently used in
the industry cannot be reflowed. Hence, the base (without the battery) is first reflowed, and then the assembly containing the battery is manually placed at the end of an assembly process. By eliminating these additional assembly steps, the DS2070W/DS3070W, reduce both production time and costs.
Protects mission-critical data
The DS2070W/DS3070W protect
mission-critical data from unexpected power loss by utilizing intelligent circuitry to constantly monitor Vcc. Whenever Vcc is
applied to a module, it recharges the internal manganese-lithium battery, powers the SRAM from the external power source, and allows the contents of the SRAM to be modified. When an out-of-tolerance
condition occurs, the battery automatically switches on and write protection is unconditionally enabled to prevent data corruption. There is no limit to the number of write cycles that can be executed,
and no additional support circuitry is required for microprocessor
The DS2070W/DS3070W are available in a RoHS-compliant, 27mm x 27mm,
256-ball BGA package, which is completely sealed from the outside
environment. These devices are specified for use over the -40 degrees Celsius to +85 degrees Celsius industrial temperature range. Prices start at $38.41 for the DS2070W+100 and $42.25 for the DS3070W+100 (1000-up, FOB USA).
Click here for data sheets:DS2070 and DS3070
Dallas Semiconductor 1-800-998-8800