Seoul, South Korea Samsung Electronics Co., Ltd. said it has developed the industry's first one gigabit (Gbit) mobile DRAM (dynamic random access memory) for mobile products, using 80-nm process technology.
The 1-Gbit chip, also known as a low-power DDR (double data rate) or synchronous DRAM, will be used for a wide range of advanced handset applications as well as for digital still cameras, portable media players and portable gaming products.
The monolithic 1-Gbit mobile DRAM offers a full 30 percent drop in electric current in comparison with the double-die stack, 1-Gbit memory solution widely used today. It's also at least 20 percent thinner than the multi-stack package of 512-Mbit die, which allows for a single high-density package solution of 1.5-Gbit or 2-Gbit mobile DRAM. One 1-Gbit mobile DRAM can also be combined with Flash memory in multi-chip packaging including package-on-package designs.
In addition, the 1-Gbit mobile DRAM chip uses the same packaging technique as the 512-Mbit double-die stack 1-Gbit package, while offering a new temperature-sensing feature. The new temperature-compensated, self-refresh feature maximizes the self-refresh cycle to reduce power drain in standby mode by 30 percent over conventional memory chip designs. Click the links for more information about Samsung's semiconductors, memory products, and DDR SDRAMs.
Mass production of the 1-Gbit DRAM is expected to start in second quarter 2007.
Samsung Electronics Co., Ltd., www.samsung.com