San Jose, Calif.—Renesas Technology's R2J20602NP 40-amp driver-MOSFET claims the industry's highest efficiency, cutting power losses by more than 20 percent compared to the company's first generation product.
"Manufacturers of blade servers, hard disk devices, PCs, test equipment, and communication equipment are being challenged to find ways to handle the trend to lower voltages, larger currents, and higher operating frequencies for electronic components such as CPUs,
FPGAs, and memories," said Tetsuo Sato, director of business development. "As a result, they find it essential to design or purchase power supply circuits that offer faster response, output lower voltages and
more current, yet are also smaller and more efficient. Our new R2J20602NP power device addresses these issues directly. This compact, second-generation DrMOS compliant product delivers the best power efficiency in the industry."
The device, with driver IC and high- and low-side power MOSFETs in a 56-pin QFN package for voltage regulators, DC/DC switching supplies, and POL converters, conforms to the integrated driver-MOSFET (DrMOS) package standard. Working at up to 2 MHz, the R2J20602NP can deliver up to 40 amps. Its maximum efficiency is 89 percent (at 1 MHz, with Vin = 12, Vout =1.3). With an output current of 25 amps, the chip's total power loss is just 4.4 watts. The device's package is a RoHS-compliant, high heat-radiation type with a small (8-by-8 mm) mounting-area. It uses a wireless copper-plate construction technique for internal connections, greatly reducing resistance and parasitic inductance within the package. Pins for large-current paths occupy most of the rear surface of the package and facilitate heat dissipation.
Click here for the product datasheet. The R2J20602NP is in sampling. It's priced at $6.30 each.
Renesas Technology, 1-408-382-7407, www.renesas.com