SEOUL, South Korea Samsung Electronics Co. Ltd. said it has developed the industry's first 1-Gbit DRAM for mobile products, using 80-nm process technology.
The synchronous DRAM is intended for use in a range of handset applications as well as for digital still cameras, portable media players and portable gaming products, Samsung said.
The monolithic 1-Gbit mobile DRAM uses the same packaging technique as the 512-Mbit double-die stack 1-Gbit package, but it introduces a temperature-sensing feature. This temperature-compensated self-refresh feature maximizes the self-refresh cycle to reduce power drain in standby mode by 30 percent over conventional memory chip designs.
The 1-Gbit DRAM is 20 percent thinner than a multi-stack package of 512-Mbit die.
Samsung said it plans to mass produce the new device beginning in the second quarter of 2007.