South Portland, MaineFairchild Semiconductor's FDB2614 (200V) and FDB2710 (250V) N-channel MOSFETs are designed to provide system efficiency and space optimization in plasma display panel (PDP) applications.
According to Fairchild, the FDB2614 and FDB2710 MOSFETs achieve the lowest available RDS(on) compared with similar devices on the marketthe FDB2614 produces 22.9 mOhms, typical and the FDB2710, 36.3 mOhms, typical. Fairchild attributes low RDS(on) to its proprietary PowerTrench process technology.
By combining low RDS(on) with a very low-gate charge (Qg), the FDB2614 and FDB2710 MOSFETs deliver what is says is "best-in-class" Figure of Merit (FOM). As a result, the the FDB2614 and FDB2710 MOSFETs achieve lower conduction loss and improved switching performance in PDP systems.
The devices' low RDS(on) and small die size at 200V or 250V breakdown voltages enable these devices to be housed in space-saving D2PAK packaging.
Pricing: In 1,000-piece quantities, the FDB2614 is $3 each and the FDB2710 costs $2.80.
Availability: Samples available now; delivery is 12 weeks ARO.
Data Sheets: FDB2614 and FDB2710
Fairchild Semiconductor Corp., 1-207-775-8100, www.fairchildsemi.com