Irvine, Calif. Toshiba America Electronic Components has expanded its power semiconductor lineup with a selection of low on-resistance small-signal MOSFETs (S-MOS) suitable for high-speed switching devices or DC-DC converters in portable electronics equipment. The MOSFETs feature on-resistance and come in 2.8 mm x 2.8 mm and 1.6 mm x 1.6 mm packages. The converters are suitable in medium-output current applications including laptop PCs, cellular phones, digital cameras and audio players.
The S-MOS family includes 17 six-pin devices designed for 0.5 A to 2.5 A load switching applications and DC-DC converters operating at 0.5 MHz to 1 MHz, and 20 three-pin devices that are suitable for 0.5 A to 4.0 A switching devices. The six-pin devices, with ON-resistance from 30 milliohms to 400 milliohms, are available in a 1.6mm x 1.6mm x 0.55mm package. The three-pin devices feature ON-resistance from 100 milliohms to 400 milliohms and are offered in a 2.8mm x 2.9mm x 0.7mm package.
The six-pin S-MOS family includes N-channel devices with drain source voltage of 20 V or 30 V and driving voltage of 1.8 V, 2.5 V or 4 V, and P-channel devices with -12V, -20V or -30V drain source voltage, and driving voltage of 1.5 V, 1.8 V, 2.5 V or 4 V. The three-pin S-MOS family includes N-channel devices with drain source voltage of 20V, 30V or 60V, and driving voltage of 1.8 V, 2.5 V or 4 V, and P-channel devices with -12 V, -20 V or -30 V drain-source voltage, and driving voltage of 1.8 V, 2.5 V or 4 V.
Availability: Samples available in March 2007
Pricing: Begins at $0.05 in sample quantities
Toshiba, 949-455-2000, chips.toshiba.com