Irvine, Calif. Toshiba America Electronic Components, Inc. (TAEC) has expanded its power semiconductor line with the first products in a new family of high-speed switching MOSFETs that are said to significantly improve power efficiency for synchronous DC/DC converters.
Based on Toshiba's UMOS-V, a fifth-generation ultra-high-speed process technology that improves power efficiency, the UMOS-V MOSFETs are aimed at power supplies for synchronous DC/DC converter applications in flat panel displays, servers, desktop and mobile computers, and portable electronics devices.
The UMOS-V process improves many of the key parameters required for better power efficiency in both high- and low-side MOSFETs in a synchronous DC/DC converter, said the company. For the low-side MOSFET, these include lower on-state resistance RDSon and reduced self-turn-on loss, achieved through lower gate-to-drain capacitance, lower gate resistance Rg , and optimized gate threshold voltage. On the high-side MOSFET, the new process technology enables faster switching, achieved through lower gate charge (Qsw) and lower gate resistance.
The eleven initial UMOS-V products are offered in four packages SOP Advance, SOP-8, TSSOP Advance and PS-8 to provide a range of size and performance choices. Four 30-volt (V) n-channel single MOSFETs with RDSon ratings ranging from 3.1 to 9 milliohms, maximum at 10 V, are available in SOP Advance packages, which feature a 41 percent lower profile than standard SOP-8 packages, and enable approximately 47 percent higher power dissipation.
The standard SOP-8 package offering includes four 30-V n-channel single MOSFETs with RDSon ratings ranging from 3.1 to 9 milliohms, maximum at 10V. Other products in the family include two 30-V n-channel single MOSFETs with RDSon ratings of 9 milliohms and 11milliohms, maximum at 10V, in compact Toshiba TSSOP packages, measuring 3.9 x 4.65 x 0.7 5mm, and a 30-V device in a PS-8 package, measuring 2.8 x 2.9 x .8 mm, with a RDSon rating of 5.7 milliohms. Additional UMOS-V MOSFETs are planned with higher voltage ratings, as well as p-channel, dual-channel and MOSBD configurations.
The UMOS- V MOSFETs will be showcased at the Applied Power Electronics Conference and Exposition (APEC) 2007, in Anaheim, Calif., Feb. 26 to 28.
Pricing: Ranges from $0.60 to $0.90.
Availability: Samples of the first eleven devices in the Toshiba UMOS-V MOSFET family are scheduled for availability in March 2007, with production quantities scheduled for availability in second quarter 2007.
Toshiba America Electronic Components, Inc., www.chips.toshiba.com