Durham, N.C. Cree Inc. is shipping sample quantities of three gallium nitride (GaN) high electron mobility transistors (HEMT) that are capable of boosting WiMAX power amplification efficiency by up to 50 percent.
The CGH27015S, CGH35015S and CGH35030F provide linear power and efficiency for WiMAX and broadband wireless access applications operating between 2.3 GHz and 3.9 GHz.
The CGH27015S, contained in a small 3-mm x 3-mm plastic over-mold QFN package, typically produces 2.5 watts of average output power and 28-percent drain efficiency over the frequency range of 2.3 GHz to 2.9 GHz.
According to Cree, this represents up to a 40-percent improvement in device efficiency when compared with traditional technologies such as silicon LDMOS or GaAs under WiMAX signals and requirements (802.16-2004). It also features 15 dB of small-signal gain and 2.0-percent error vector magnitude (EVM) under orthogonal frequency- division multiplexing (OFDM) modulation when operated at 28 volts.
The CGH35015S, also provided in an over-mold QFN package, typically produces more than 2.5 watts of average power and 28-percent drain efficiency with typical small-signal gain of 13 dB over the frequency range of 3.3 to 3.9 GHz. According to Cree, this represents up to a 50-percent improvement in device efficiency when compared with silicon LDMOS or GaAs under WiMAX signals.
In addition, the CGH35030F transistor provides 4 watts of average power with 23-percent efficiency over the 3.3 to 3.9-GHz frequency range. This component features more than 11-dB gain and two-percent EVM under OFDM modulation. When employed in an efficiency-enhancement circuit, a pair of these transistors produced more than 10 watts of average power with over 42-percent efficiency in the 3.5 GHz WiMAX band, according to the company.
All three of the Cree devices are EU RoHS-compliant.
Cree Inc., 919-313-5300, www.cree.com