Santa Clara, Calif. IM Flash Technologies, the manufacturing joint venture between Intel Corp. and Micron Technology Inc., is sampling a 50-nm multi-level cell (MLC) NAND flash memory with a 16-Gbit die density.
The latest 50-nm MLC technology complements the previously announced 50-nm single-level cell (SLC) products that the companies are shipping today at a 4-Gbit die density. The new MLC NAND flash memory is intended for computing and consumer electronics devices that are increasingly smaller, the companies said.
The MLC NAND product caps a year of productive activity in which Intel and Micron have aggressively ramped a state-of-the-art 300 millimeter (mm) flash manufacturing factory network and are in the midst of developing sub-40nm NAND flash memory products.
Along with producing NAND flash out of Micron facilities in Boise, Idaho, and Manassas, Va., the IM Flash joint venture has also been manufacturing wafers since February at a 300mm facility in Lehi, Utah, that is completely dedicated to the joint venture. Additionally, the companies are moving forward on plans to bring a new IM Flash manufacturing facility to Singapore with their recently announced Singapore partnership.
Intel Corp., (408) 765-8080, www.intel.com
Micron Technology Inc., 1-208-368-4400, www.micron.com