San Jose, Calif. Fairchild Semiconductor introduced seven MicroFET products, which target low-voltage applications in the <30 V and <20 V ranges. The MicroFET offers performance and space advantages over conventional MOSFETs. The combined benefits of compact packaging and high-performance make MicroFET devices well-suited for battery charging, load switching and boost and DC/DC conversion.
Four of the MicroFET products, the FDMA1023PZ, FDMA520PZ, FDMA530PZ and FDMA1025P, offer various configurations which combine single and dual P-channel PowerTrench MOSFETs and ESD-protecting zener diodes. For additional system performance, the FDMA1023PZ offers RDS(ON) ratings at gate voltages (VGS) as low as 1.5 V. These devices are suited for charging and load-switching applications.
The other three products being introduced offer N- or P-channel MOSFET/Schottky diode combinations. The FDFMA2P029Z and FDFMA2P857 devices combine a P-channel MOSFET with a Schottky diode which is used for enhanced forward voltage (VF) and reversed leakage (IR) to maximize efficiency. These two devices are targeted at for charging applications where reduced thermal resistance is critical. The third device, the FDFMA2N028Z, uses an N-channel MOSFET and Schottky diode combination, a configuration well-suited to boost applications.
These products are available in lead (Pb)-free packages which meet the requirements of the joint ICP/JEDEC standard J-STD-020C and are compliant with the European Union regulations now in effect.
Pricing: Begins at $0.39 each in 1,000-piece quantities
Data Sheets: FDMA520PZ, FDMA530PZ, FDMA1025P, FDMA1023PZ, FDFMA2N028Z, FDFMA2P029Z, FDFMA2P857
Fairchild Semiconductor, 800-341-0392, www.fairchildsemi.com