Phoenix, Ariz. ON Semiconductor has launched its HighQ copper (Cu) on silicon (Si) integrated passive device (IPD) manufacturing services along with IPD product design tools. The HighQ copper on silicon 8-inch wafer technology is said to deliver higher performance higher Q than less sophisticated Cu Si processes and at a better cost than ultra-high performance Gold (Au) on Gallium Arsenide (GaAs) based passive products.
The HighQ IPD process technology is suitable for the production of passive devices such as baluns, couplers, and filters that are used in portable and wireless applications where higher performance equates to longer battery life, said ON Semiconductor.
The HighQ process technology offers thick copper inductors, MIM capacitors, and TiN resistors (9 ohms/square). ON Semiconductor says it's a proven reliable process that will meet the full suite of reliability evaluation including:
- Temperature cycling: -65°C/150°C
- Full intrinsic reliability on metals, vias and MIM
- High temperature operational life (150°C, 504 hours)
- ESD rated: HBM, MM
ON Semiconductor also offers a full-featured IPD design kit that is available to the company's manufacturing services customers. This design kit enables simulation to actual first silicon and includes standard Cadence design tools including PCELL Generators, Views, etc.; Cadence Assura DRC, LVS; Cadence RFDE environment with Agilent ADS models, and fully automated conversion from layout to the HFSS simulation environment.
Rapid prototyping services provide manufactured silicon in as little as six weeks.
Availability: ON Semiconductor is currently developing a line of HighQ high-bandwidth filters for electromagnetic interference (EMI) reduction applications on high-speed serial interfaces. Samples will be available this summer with production scheduled to ramp in fourth quarter 2007.
ON Semiconductor, 1-602-244-6600, www.onsemi.com