San Jose, Calif.Cypress Semiconductor Corp. has started to sample a 4-Mbit nvSRAM that features access times of 15 ns, infinite read, write and recall cycles, and 20-year data retention.
The 4-Mbit nvSRAM is aimed at applications requiring continuous high-speed writing of data and absolute non-volatile data security, including RAID applications, harsh environment industrial controls, and data logging functions in automotive, medical and data communications systems.
The 4-Mbit nvSRAMs are the first manufactured on Cypress's S8 0.13-micron SONOS (Silicon Oxide Nitride Oxide Silicon) embedded nonvolatile memory technology, yielding greater densities and improved access times.
The 4-Mbit nvSRAM is available in either a 512-Kbit x 8 (CY14B104L) or 256-Kbit x 16 (CY14B104N) configuration. The devices are ROHS-compliant and directly replace SRAM, battery-backed SRAM, EPROM and EEPROM devices, offering non-volatile data storage without batteries.
Availability: Production starts in the first quarter of 2008.
Datasheet: click here.
Cypress Semiconductor Corp., 1-408-943 2600, www.cypress.com