Santa Clara, Calif. IXYS Corp. has released a new generation of fast 300-V insulated gate bipolar transistors (IGBTs) built with the IXYS HDMOS IGBT process.
The five new products the IXGH42N30C3, IXGH60N30C3, IXGH85N30C3, IXGH100N30C3 and IXGH120N30C3 are capable of hard-switching up to 100 kHz with current ratings of 42 A to 120 A.
These IGBTs are currently available in the TO-247 discrete package. Additional package offerings will be made available in the future. All the devices may also be co-packaged with IXYS' high-performance HiPerFRED fast diodes. This combination of high switching speeds and low conduction losses gives power designers a new high-value option for switching applications at 300 V and below, said IXYS.
The 300-V IGBT devices are optimized for low Vsat, lower forward voltage drop, with a higher current density capability than an equivalent MOSFET. As a result, the 300-V IGBTs can operate with better efficiency and with a smaller die size resulting in lower costs when compared to 300-V power MOSFETs, according to IXYS. These devices are also rugged in unclamped inductive switching applications, i.e., UIS rated, comparable to most rugged power MOSFETs, added the company.
Applications include PFC circuits, UPS systems, inverters for solar energy, switch-mode or resonant-mode converters and power supplies, pulse generators, PWM light control, PWM heaters, capacitive discharge applications and a variety of motor control applications.
Product information: IGBT products