TriQuint Semiconductor's dual-band Wi-Fi front-end modules (FEMs) achieve new performance, distance and integration milestones, enabling significantly faster wireless connections and increased distance.
Kevin Gallagher, TriQuint's Wireless LAN Product Marketing Manager, said TriQuint's RF MIMO product is significant because the module is created entirely using an E/D pHEMT gallium arsenide (GaAs) process. Previously, this would have required multiple semiconductor technologies.
The technology allowed TriQuint to integrate the power amplifier (PA), the switch, the low noise amplifier (LNA) and the bias network / controller into a single die.
In addition to integrating multiple components, TriQuint reduced the size of the overall module while achieving best-in-class performance and power dissipation. TriQuint's advances have reduced the part count, simplified design, increased ruggedness and extended battery life.
By utilizing three modules in parallel within the RF front end, three receive and transmit signal paths are available instead of one, enabling significantly higher data rates. The effect is similar to opening extra lanes on a freeway where more 'lanes' equals a faster commute. In the case of data, more signal paths translate into faster throughput.
More information is available at www.triquint.com.