Austin, Tex.—Three new power components from Vishay, announced at APEC 2008, include the first device in their TrenchFET Gen III family— a 30-volt power MOSFET claiming an industry-best on-resistance and figure-of-merit; a new series of half-bridge 600- and 1200-V IGBT modules; and two controller ICs for intermediate bus converters touted as the first to integrate 1.6-amp high- and low-side MOSFET drivers.
The n-channel Si7192DP MOSFET, an n-channel device in a PowerPAK SO-8 package, features a maximum on-resistance of 2.25 milliohms at VGS = 4.5. Its figure-of merit (FOM, i.e., on-resistance times gate charge) is 98, a new industry standard according to the company for any VDS = 30, VGS = 20 device in an SO-8 footprint.
Compared to the closest competing devices optimized for low conduction losses, and low switching losses, these specifications, respectively, represent a claimed improvement for on-resistance of two percent and a bettering of FOM by one percent.
The company's new series of half-bridge insulated-gate bipolar transistors (IGBT) in the industry-standard Int-A-Pak package, rated at from 75 to 200 amps, comprises eight 600- and 1200-volt devices for hard switching operating frequencies in standard and ultrafast speeds. The devices feature three different IGBT technologies to meet a variety of application needs. The GA100TS60SFPbF and GA200HS60S1PbF offer standard punch-through (PT) IGBT technology, while the GA200TS60UPbF, GA75TS120UPbF, and GA100TS120UPbF devices utilize Generation 4 technology for tighter parameter distribution and high efficiency. The GB100TS60NPbF, GB150TS60NPbF, and GB200TS60NPbF modules offer Generation 5 non-punch-through (NPT) technology for 10-microsecond short-circuit capabilities.
In addition, the company has two new controller ICs for intermediate bus converter (IBC) applications, the first such single-chip devices to integrate high-voltage (75-volt) half-bridge MOSFET drivers with 1.6-amp peak current driving capability and a full range of current monitoring and control features. The SiP11205 feed-forward controller and SiP11206 half-bridge controller are designed to work on the primary side of an isolated half-bridge IBC in telecom and network equipment power architectures that provide conversion from 48-to-12 volt (or lower) intermediate voltages. The new devices simplify designs and reduce solution costs by eliminating the need for separate controller and high-voltage MOSFET driver components for secondary synchronous rectification, while their half-bridge architecture further reduces costs and space requirements by enabling the use of lower-voltage components. Effiicency is greater than 95 percent.
Vishay Intertechnology, 1-610-251-5287, www.vishay.com