Neubiberg, Germany and Austin, TexasInfineon Technologies AG is touting its latest product line as the industry's first 900 V superjunction MOSFETs specifically intended for high-efficiency SMPS (switched-mode power supply), industrial and renewable energy applications.
The energy-saving CoolMOS 900 V power MOSFET family overcomes the silicon-limit in power transistor manufacturing, and provides an alternative for high-voltage designs using standard TO (Transistor Outline) packages.
The CoolMOS family of power transistors provides twice the voltage blocking capability of conventional devices, leading to a five-fold increase in RDS(on), according to Infineon. In overcoming the silicon limit, the CoolMOS 900 V devices achieve what Infineon says is the industry's lowest RDS(on) per package type. On-state resistances of 0.12 ohm in a TO-247 package, 0.34 ohm in a TO-220 package and 1.2 ohms in D-PAK packages are at least 75 percent lower than can be achieved in such packages using conventional 900 V MOSFETs.
Because of the low RDS(on), the CoolMOS 900 V devices can offer an FOM (figure-of-merit, calculated as on-state resistance times gate charge) as low as 34 ohms nanocoulomb, which results in low conduction, driving and switching losses, and leads to increased efficiency.
CoolMOS 900 V family members will be available in several industry-standard packages, including devices with RDS(on) of 120 m(omega), 340 m(omega) and 1200 m(omega) in TO-247, TO-220, TO-220FP and D-PAK packages, respectively. In addition, 500 m(omega), 800 m(omega) and 1000 m(omega) devices will be available.
Pricing: The volume price for a 120 m(omega) part in a TO-247 package will be below $3.50.
Availability: Samples of the 340 m(omega) device in TO-220, TO-220FP and TO-247 packages, and of the 1200 m(omega) part in a D-PAK, are available now.
Infineon Technologies AG, www.infineon.com