Malvern, Pa.Vishay Intertechnology Inc. has rolled out the first device in a new third-generation TrenchFET power MOSFET family.
The TrenchFET Gen III Si7192DP, an n-channel device in the PowerPAK SO-8 package, features maximum on-resistance of 2.25 milliohms at a 4.5-V gate drive voltage. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in dc-to-dc converter applications, is 98, which according to Vishay, sets an industry record for any VDS = 30 V, VGS = 20 V device in an SO-8 footprint. Lower on-resistance and lower gate charge translate into lower conduction and switching losses, respectively.
The Vishay Siliconix Si7192DP will be used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications. Its low conduction and switching losses will enable more power-efficient and space-efficient designs for voltage regulator modules (VRMs), servers, and a wide range of systems using point-of-load (POL) power conversion.
Pricing: For U.S. delivery in 100,000-piece quantities is $0.85.
Availability: Samples and production quantities are available now, with lead times of 10 to 12 weeks for large orders.
Datasheet: Click here.
Vishay Intertechnology Inc., 1-619-336-0860, www.vishay.com