El Segundo, Calif.International Rectifier, IR, expanded its portfolio of RAD-Hard logic level gate drive MOSFETs with the introduction of 60 V, 100 V and 250 V MOSFETs for switch mode power supplies (SMPS), satellite power distribution systems and resonant power converters in high-reliability applications.
Compared to bipolar transistors, the RAD-Hard MOSFETs can be driven directly from CMOS/TTL logic circuitry, eliminating the need for intermediate components. This helps reduce part count, simplify drive circuitry and enhance reliability. Moreover, low on-state resistance (RDS(on)), fast switching and small size, make the MOSFETs ideal alternatives to traditional bipolar devices.
The extended family of MOSFETs includes N and P channel in single and multi-chip configurations offered in a range of through-hole and surface mount packages including SMD-0.5, SMD-2, LCC-28, 14 lead flat pack, TO-205AF, Low-Ohmic TO-257AA, and MO-036AB. The devices have total ionizing dose (TID) capability of up to 300 Krad(Si), single event effect (SEE) immunity to 82 MeV, and are available in screened and commercial off-the-shelf (COTS) versions.
Pricing: Begins at $495.85 each for the IRHLA770Z4 in 1,000-unit quantities.
Datasheets: Click here.
International Rectifier, www.irf.com