Vishay Intertechnology, Inc. has released new 20-V and 30-V p-channel TrenchFET power MOSFETs with a +/- 20-V gate source voltage that offer the industry's lowest on-resistance for their device types in the SO-8 footprint.
Whereas the available competing devices with these voltage ratings in the SO-8 footprint offer on-resistance only down to 24 milliohms, the Si7633DP offers an ultra-low on-resistance of 3.3 milliohms at 10 V and 5.5 milliohms at 4.5 V. These values are 27 percent lower at 10 V and 28 percent lower at 4.5 V than the closest competing 30-V device and 28 percent and 15 percent lower, respectively, than the closest competing 25-V SO-8 device. The 30-V Si7135DP offers an on-resistance of 3.9 milliohms at 10 V and 6.2 milliohms at 4.5 V. These values are 13 percent lower at 10 V and 19.5 percent lower at 4.5 V than the closest competing device.
Packaged in the PowerPAK SO-8, both MOSFETs allow for a 60 percent higher maximum drain current and 75 percent higher maximum power dissipation than devices in the SO-8 package.
The devices will be used as the adaptor switch and for load switching applications in notebook computers and industrial/general systems. Adaptor switches (switching between the adaptor/wall power and the battery power) are always on and drawing current. The lower on-resistance of the Si7135DP and Si7633DP translates into lower power consumption, saving power and prolonging battery life between charges.
Vishay has also released the Si4459ADY 30-V p-channel TrenchFET power MOSFET in the SO-8 package. The device offers an on-resistance of 5 milliohms at 10 V and 7.75 milliohms at 4.5 V. All devices released today are 100 percent Rg- and UIS-tested and halogen-free.
Samples and production quantities of the new Si7135DP and Si7633DP TrenchFET power MOSFETs are available now, with lead times of 10 to 12 weeks for larger orders.
Datasheet for the Si7633DP
Datasheet for the Si7135DP