IXYS Corporation's Microwave Technology, Inc. (MWT) division has introduced a family of three high linearity and high efficiency RF power amplifier products with output power up to 10 W based on advanced high quality GaN device technology.
The power amplifiers are MGA-242740-02, MGA-495922-02, and MGA-4959-02, targeted at 802.16d/e WiMax applications and 802.11 WLAN related applications with three frequencies bands, 2.4 to 2.7 GHz, 3.3 to 3.8 GHz, 4.9 to 5.9 GHz, respectively. All three parts have high output power of 10Watt (40 dBm) measured at 3 dB gain compression point and linear power gain range from 12 to 15 dB. The GaN based RF power amplifier parts have achieved 23 percent power added efficiency at 2 W (33 dBm) linear power (burst power) with 2.5 percent EVM (Error-Vector-Magnitude) under the 64 QAM 802.16 WiMax digital signal modulation scheme.
"The linear power efficiency performance achieved by those GaN based power amplifiers is exceptional and is more than twice, in comparison with the GaAs or Silicon LDMOS based PA counter parts. We have demonstrated the excellent suitability of GaN based power devices for the applications we target and also the advanced microwave/RF amplifier design capabilities of our company," commented by Dr Greg Zhou, general manager of MwT. "We will continue to leverage the advantages of the microwave/RF GaN power device technology with high reliability and expand the product family to other applications that demand high linear power and power added efficiency performances including military and high rel applications."
The GaN based power amplifies, biased at 28 V on drain with quiescent current between 80 - 300 mA, are available in various packages including the low cost surface mount 02 packages. The MTBF (mean-Time-Before-Failure) for those GaN based microwave/RF power amplifiers is over 100 years at 85C ambient temperature. The evaluation boards for the power amplifiers in 02 packages are available now.
Datasheets for MwT's GaN based power amplifiers