A new range of logic level gate drive trench HEXFET power MOSFETs has been introduced by International Rectifier which features benchmark on-state resistance (RDS(on)) and a high package current rating for high power DC motors and power tools, industrial batteries and power supply applications.
Utilizing IR's latest trench technology, the new family of benchmark MOSFETs offers a low RDS(on) at 4.5 V Vgs to significantly improve thermal efficiency. Additionally, the devices' higher current rating provides more guard band from unwanted transients and reduces part count in parallel-type topologies where several MOSFETs share high current. With a package current rating of up to 195 A, the TO-220, D2PAK and TO-262 packages deliver more than 60 percent improvement over typical package ratings, while the 7-lead D2PAK further reduces RDS(on) by as much as 16 percent compared to the standard D2PAK to provide an even more robust option.
"Featuring benchmark RDS(on), the new logic level gate drive trench MOSFETs can be driven from a microcontroller or weak battery to deliver improved efficiency at light load conditions, making them ideally suited for high current DC-DC switching and DC motor drive applications," said Brian LaValle, marketing manager for IR's Power Management Devices Business Unit.
The new family of logic level trench MOSFETs provides a voltage range of 40 V to 100 V. Qualified to industrial grade and moisture sensitivity level 1 (MSL1) the devices are available in all standard power packages including TO-220, D2PAK, TO-262, as well as a 7-lead D2PAK. The devices are offered lead free and are RoHS compliant.
Availability and Pricing
The new devices are available immediately. Pricing for the IRLB3034PBF begins at US $1.26, IRLB3036PBF at US $1.29 and IRLB4030PBF at US $1.33, each in 10,000-unit quantities.
Datasheet for the: IRLB3036PBF