Vishay Intertechnology, Inc., has introduced a new with the lowest on-resistance ever achieved for a dual p-channel device in the thermally enhanced PowerPAK SC-70 2-mm by 2-mm footprint area.
With the SiA921EDJ, Vishay extends its p-channel TrenchFET Gen III technology to ultra-small packages for handheld electronics. The new device will be used for dc-to-dc buck converters, as well as load, PA, and battery switches in portable devices such as cell phones, smart phones, PDAs, and MP3 players. The lower on-resistance of the SiA921EDJ translates into lower power consumption, saving power and prolonging battery life between charges in these devices.
The SiA921EDJ offers an ultra-low on-resistance of 59 mΩ at 4.5 V and 98 mΩ at 2.5 V. The low on-resistance of the TrenchFET Gen III MOSFET translates into lower conduction losses, allowing the device to perform switching tasks with less power than any previous dual p-channel power MOSFETs on the market.
The closest competing p-channel device with a > or = 12-V gate-to-source rating features on-resistance of 95 mΩ at a 4.5-V gate drive and 141 mΩ at 2.5 V. These values are 38 percent and 44 percent higher, respectively, than the SiA921EDJ. The compact 2-mm by 2-mm footprint of the PowerPAK SC-70 is half the size of the TSOP-6, while offering comparable on-resistance.
The MOSFET is halogen-free in accordance with IEC 61249-2-21.
Samples and production quantities of the new SiA921EDJ TrenchFET power MOSFET are available now, with lead times of 10 to 12 weeks for larger orders.
Datasheet for the: SiA921EDJ