A new range of power MOSFETs that is optimized for motors used in fans, pumps and other automotive motion control applications has been launched by Toshiba Electronics Europe (TEE).
The new MOSFETs combine industry-leading on-resistance and input capacitance ratings with a package design that offers better thermal dissipation and power cycling capabilities than previous automotive MOSFETs.
Available with maximum voltage (VDSS) and current (ID) ratings of 60 V and 150 A, Toshiba's new MOSFETs are based on the company's latest U-MOS trench semiconductor technology. The technology contributes to typical RDS(ON) specifications as low as 1.7mΩ and typical input capacitances (Ciss) down to just 4500 pF. As a result, the devices offer the industry's smallest RDS(ON) gate charge (Qg) 'figure of merit', which ensures optimum switching speed and efficiency.
All of the new MOSFETs are supplied in Toshiba's TO220SM(W) package. This uses copper connectors and a wide source terminal to drive down RDS(ON) and package inductance, reduce thermal resistance, and ensure high current carrying capacity. The package is qualified to AEC-Q101 at a channel temperature of 175 degrees C. A thickness of just 3.7 mm means that it is 21 percent thinner than existing TO-220SM package technology.
Toshiba's current line-up of TO220SM(W) automotive MOSFETs comprises five devices with respective current/voltage ratings of -60 V/-120 A (TJ120F06J3); 40V/100A (TK100F04K3); 40V/150A (TK150F04K3); 60 V/100 A (TK100F06K3); and 60 V/130 A (TK130F06K3). Typical RDS(ON) ratings range from 1.7mΩ to 5.5 mΩ, while typical Ciss and Qg ratings range from 4500 pF and 98 nC to 11500 pF and 258 nC.