Diodes Incorporated has introduced a complementary pair of 100 V enhancement mode MOSFETs in an SO8 package that achieves the same performance as that of much larger individually packaged parts.
The ZXMC10A816 is aimed at H-bridge circuits in DC fan and inverter circuits, Class D amplifier output stages, and an array of 48V applications.
Enabling designers to replace equivalent devices in SOT223 and DPak (TO252) packages, the N- and P-channel MOSFET combination reduces board space and component count as well as simplifies gate drive circuit layouts. As an illustration of its space saving potential, the SO8 package's footprint of just 31mm2 is 30 percent that of two SOT223 MOSFETs.
The N- and P-channel MOSFETs used in the dual device package exhibit low gate charge and typical RDS(ON) of 230 mΩ and 235 mΩ, respectively, at VGS of 10 V, ensuring that switching and onstate losses are minimized. Both 2.4 W and 2.6 W are respective power dissipation figures.
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