Microsemi Corporation (Irvine, California) has introduced a new family of RF MOSFETs in a thermally-enhanced SOE package for broadband commercial and hi-rel applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulations distortion.
The new Microsemi MOSFETs are gold-metallized silicon n-channel RF power transistors with 25 percent lower thermal resistance and 30 percent higher power dissipation than is available in industry standard M174 packages.
The new VRF151E and VRF152E are capable of operating up to 175 MHz, and the VRF190E is capable of operating up to 150 MHz. They are drop-in replacements for SD2931-10, SD2941-10 and SD3931-10 transistors respectively.
Key Performance Features:
- 30 percent higher power dissipation than standard packaging
- Higher BV than competitive parts for increased ruggedness
- High VSWR
- Nitride passivated and gold metallization for improved reliability
- Lead-free construction
Availability and Pricing
Devices are available for immediate sampling.
The 500-piece pricing of the VRF151E is $45.63; the VRF152E, $56.34; and the VRF190E, $67.82.