Seoul, KoreaSamsung Electronics Co. Ltd. has developed what it claims is the first 32 gigabyte (GB) load-reduced, dual-inline memory module (LRDIMM), for server applications.
Samsung will begin mass producing the 32GB LRDIMM in the second half of this year.
Using 40 nanometer-class, four gigabit (4Gb) DDR3 chips, which Samsung introduced earlier this year, the new 32GB LRDIMM accommodates next generation servers designed for virtualization, cloud computing and other high-capacity applications. Samsung defines 40-nm-class as a process technology node somewhere between 40 and 49 nanometers.
Samsung's 32GB LRDIMM prototype consists of 72 4Gb DDR3 chips and an additional memory buffer chip to help reduce the load on the memory subsystem by as much as 75 percent, according to Samsung.
By using 32GB LRDIMMs, memory capacity can rise up to 384 gigabytes per CPU. In a two-way server system, capacity can be increased up to 768GB, or about 1.5 times that of a 512GB server system equipped with 32GB DDR3 RDIMMs.
A server equipped with LRDIMMs can process data at 1,333 megabit per second (Mbps), approximately 70 percent faster than the previous speed of 800 Mbps. Samsung's LRDIMMs operate at 1.35 or 1.5 volts.
Samsung Electronics Co. Ltd., www.samsung.com