Diodes Inc. expanded its DIOFET product portfolio with the introduction of two dual channel devices: The DMS3017SSD and DMS3019SSD.
The two devices integrate an optimized control MOSFET with a proprietary DIOFET into a single SO8 package to provide a high-efficiency solution for point-of-load converters in consumer and industrial applications.
The low side DIOFET device integrates a power MOSFET and anti-parallel Schottky diode into a single die. The typical low RDS(ON of the DIOFET ensures that conduction losses are kept to a minimum, while its forward voltage (VSD) is 25% lower than comparable MOSFET/Schottky solutions, thereby further minimizing conduction losses through the body diode during PWM deadtime.
The high side MOSFET included in the DMS3017SSD and DMS3019SSD features low gate charge and fast switching, enabling high-side switching losses to be minimized.
These device characteristics enable the DMS3017SSD and DMS3019SSD to deliver a point-of-load conversion efficiency of 94% under full load conditions while at the same time reducing footprint and improving circuit design by reducing the parasitic inductance associated with co-packaged or externally mounted Schottky diodes.
The lower temperature operation of these components can also contribute to an improvement in reliability, since every 10°C reduction in MOSFET junction temperature doubles the lifetime reliability of the point-of-load converter.
Availability: Now Pricing: $0.35 cents for 10,000 quantities.
David Patterson, known for his pioneering research that led to RAID, clusters and more, is part of a team at UC Berkeley that recently made its RISC-V processor architecture an open source hardware offering. We talk with Patterson and one of his colleagues behind the effort about the opportunities they see, what new kinds of designs they hope to enable and what it means for today’s commercial processor giants such as Intel, ARM and Imagination Technologies.