Vishay Intertechnology Inc. has released a 600V,
47A n-channel power MOSFET with low maximum on-resistance of 0.07 O at a 10 V
gate drive and an improved gate charge of 216 nC in the TO-247 package.
According to Vishay, the SiHG47N60S's 15.12
O-nC gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs
used in power conversion applications, is the lowest for this device
type. Low on-resistance translates into lower conduction losses that save
energy in inverter circuits and pulse width modulation (PWM) full-bridge
topologies in solar and wind inverters, and in telecom, server, and motor
control power applications.
The SiHG47N60S is produced using Vishay Super
Junction technology, which has been tailored to minimize on-state resistance
and withstand high energy pulses in the avalanche and commutation mode. The
MOSFET is compliant to RoHS Directive 2002/95/EC and 100 % avalanche tested for
Pricing: For U.S. delivery only starts at
$4.55 per piece.
Availability: Samples and production
quantities are available now, with lead times of 10 to 12 weeks for larger
Datasheet: Click here.