Microsemi Corp. (Irvine, Calif.) has introduced high-pulsed power transistors fabricated with gallium nitride (GaN) process technology on a silicon carbide (SiC) substrate that deliver peak power and power gain for radar systems operating in the 2.7 GHz to 3.5 GHz frequency band.
Microsemi thus expands its family of Silicon BJT, RF MOSFET (VDMOS) and RF NPN power transistors, including SiC SIT devices that provide superior performance in high-power UHF Band pulsed radar applications operating at frequencies up to 450 MHz. Microsemi also uses GaN technology for a family of Enhancement Mode GaN field-effect transistors (FETs) used in satellites and other military power conversion, point-of-load, and high speed switching applications.
Microsemi's GaN-on-SiC devices feature drain breakdown voltage well above 350 Volts, enabling them to operate with a drain bias of 60 Volts.
The higher drain bias improves peak power output while yielding more user-friendly impedance levels and simplified circuit-matching requirements across the full system bandwidth. Microsemi's GaN-on-SiC devices also deliver more than 13dB of power gain and cover 400 MHz of bandwidth.
Two products for each of three frequency bands:
• 2.7-2.9GHz Band for air traffic control applications (pulse format: 100 us, 10 percent; power gain: 13 ~ 14dB typical; efficiency of 55 to 60 percent)
• 2729GN-270 — 280 W power (typical)
• 2729GN-150 — 160 W power (typical)
• 2.7-3.1GHz Band for air traffic control applications (pulse format: 200 us, 10%; power gain: 12 ~13 dB typical; efficiency of 50 to 55 percent)
• 2731GN-200 — 220 W power (typical)
• 2731GN-110 — 120 W power (typical)
• 3.1-3.5GHz Band for airborne tracking applications (pulse format: 300 us, 10%; power gain: 11 ~ 12 dB typical; efficiency of 45 to 50 percent)
• 3135GN-170 — 180 W power (typical)
• 3135GN-100 — 115 W power (typical
Sample units are available for evaluation now.
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