Fairchild Semiconductor's FDMS36xxS family of power stage dual asymmetric MOSFET modules incorporates a control and synchronous MOSFET, as well as a monolithic Schottky body diode in a PQFN package. The new family is designed to reduce the amount of board space needed and to increase power density, important in notebook, point-of-load, server, gaming, and telecommunication applications.
The switch node of the new MOSFET modules has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET and synchronous MOSFET (SyncFET) have been designed to provide optimal power efficiency for output currents up to 30 Amps. By integrating these devices into one module, the FDMS36xxS family reduces board space by replacing two or more 5mm x 6mm PQFN, S08 and DPAK packages.
The FDMS36XXS family is designed using Fairchild’s advance charge-balanced device architecture (Shielded Gate Technology) and advanced packaging technology to achieve sub-2mOhm low side RDS(ON) at high performance computing rated breakdown voltages. The product family is optimized to minimize the combination of conduction and switching losses from 300kHz to 600KHz, delivering reliable, highest power efficiency for point-of-load and multi-phase synchronous buck DC-DC applications.
The unique shield potential modulated device architecture and ultra-low source inductance packaging design used in the FDMS36xxS family delivers low noise switching, reducing susceptibility to design variation and increasing design reliability. The low noise switching eliminates the need for design mitigation approaches that require external snubbers or gate resistors thus reducing design BOM cost and saving additional board space.
Devices in the FDMS36xxS family currently include the FDMS3602S and FDMS3604AS PowerTrench power stage asymmetric dual N-channel MOSFETs. Additional devices will be added based on research and customer demands. The FDMS36xxS family is RoHS-compliant.