Texas Instruments Inc. has expanded its MOSFET driver portfolio with three next-generation two-output gate drivers that improve efficiency and reliability in high-density isolated power supplies.
According to TI, the UCC27210 and UCC27211 are the industry's first 120-V boot, high- and low-side, two-output MOSFET drivers to provide up to 4-A output current, while handling -10 volts of direct current (VDC) immunity on the driver inputs. The drivers support multiple high-frequency half-bridge and full-bridge power topologies with an 18-nanosecond (ns) propagation delay. The combined features improve efficiency and enhance reliability in telecom, server and industrial power supply designs with 100-V surge requirements.
TI also introduced what it claims is the industry's fastest 5-A dual-channel low-side driver for secondary-side synchronous rectifier MOSFETs and IGBT power switches. The UCC27524 delivers low pulse distortion and high efficiency with a fast 12-ns propagation delay, 6-ns rise time with 1-ns output delay matching. The driver, which supports 4.5-V to 18-V operating voltages, has the flexibility to combine both outputs to drive up to 10-A applications, such as motor drive systems.
Pricing: UCC27210/1 is $1.50 in 1,000-unit quantities and $0.70 for the UCC27524.
Availability: The UCC27210 and UCC27211 are available in an 8- or 10-pin, 4-mm x 4-mm 8-pin SON and an 8-pin SOIC package. The UCC27524 comes in industry-standard 8-pin SOIC and PDIP packages. A 3-mm x 3-mm, 8-pin WSON will be available later in the first quarter.
Datasheets: UCC27210/UCC27211 and UCC27524.